منصة إيفاد العلمية

محمد شريف محمد

إرسال رسالة

التخصص: فيزياء

الجامعة: سامراء

النقاط:

21.5

معامل الإنتاج البحثي

الخبرات العلمية

1. استاذ فيفيزياء البلازما
2. مقوم علمي في العديد من مجلات سكوباس
3. اجيد اللغتين العربية والانكليزية
5. حاصل على براءة اختراع في مجال صناعة المتحسسات الغازية

الأبحاث المنشورة

Plasma Diagnostics and Characterizations of Reactive Magnetron Sputtered Copper Nitride Thin Films

المجلة: Materials Science and Engineering

سنة النشر: 2020

تاريخ النشر: 2020-12-09

The plasma diagnostics of dc magnetron reactive sputtered copper nitride thin films by Optical emission spectrometer (OES) is investigated and argon / nitrogen effect (Ar /N2) mixture ratio on plasma parameters and structural properties of sputtered Cu3N thin films are discussed. Cu3N thin films of 60.30 nm and 105 nm have been formed on glass substrates at room temperature using Ar(70)/N2(30) and Ar(50)/N2(50) working gas discharges respectively. The size of crystallites ,grains and particles in the copper nitride thin films have been estimated from X-ray diffractions ,Atomic Force Microscope (AFM) ,and Field Emission Scanning microscope (FESEM) respectively . The properties of sputtered copper nitride thin films are related to the plasma parameter of electrons temperature and density. . An increase in optical transmittance and a decrease in absorbance over the wavelength range were found as the nitrogen percentage increased which result on decrease the film thicknesses. The energy of the optical band gap, Eg obtained in the range of 2.6 to 2.7 eV.

Spectroscopic plasma diagnosis of V2O5 at a Variable of Operating Power and Pressure With Radio Frequency Magnetron Sputtering

المجلة: Materials Science and Engineering

سنة النشر: 2020

تاريخ النشر: 2020-12-09

In this paper, we investigate the basic characteristics of "magnetron sputtering plasma" using the target V2O5. The "magnetron sputtering plasma" is produced using "radio frequency (RF)" power supply and Argon gas. The intensity of the light emission from atoms and radicals in the plasma measured by using "optical emission spectrophotometer", and the appeared peaks in all patterns match the standard lines from NIST database and employed are to estimate the plasma parameters, of computes electron temperature and the electron density. The characteristics of V2O5 sputtering plasma at multiple discharge provisos are studied at the "radio frequency" (RF) power ranging from 75 - 150 Watt and gas pressure (0.1, 0.08 ) mbar. One can observe that the intensity of the emission lines increases with increasing the sputtering power. We find that the electron temperature excess drastically from 0.95 eV to 1.11eV when the emptying gas pressure excess of 0.1 to 0.08 mbar. On the other hand the excess electron temperature from 0.9 to 1.01 eV with increasing sputtering power from 100 to 125 Watt, while the electron density decrease from 5.9×1014 to 4.5×1014 cm-3 with increasing sputtering power. and electron density decrease with increasing of pressure from 4.25×1014 to 2.80×1014 cm-3, But the electron density maximum values 5.9×1014 at pressure 0.08 mbar.

Network Management System for IoT Based on Dynamic Systems

المجلة: Computational and Mathematical Methods in Medicine

سنة النشر: 2021

تاريخ النشر: 2021-12-12

The Internet of Things (IoT) has the potential to transform the public sector by combining the leading technical and business trends of mobility, automation, and data analysis to dramatically alter the way public bodies collect data and information. Embedded sensors, actuators, and other devices that capture and transmit information about network activity in real-time are used in the Internet of Things to connect networks of physical objects. The design of a network management system for an IoT network is presented in this paper, which uses the edge computing model. This design is based on the Internet management model, which uses the SNMP protocol to communicate between managed devices, and a gateway, which uses the SOAP protocol to communicate with a management application. This work allowed for the identification and analysis of the primary network management system initiatives for IoT networks, in which there are four fundamental device management requirements for any deployment of IoT devices: provisioning and authentication, configuration and control, monitoring and diagnostics, and software updates and maintenance.

Design and Analysis Performance HL-Narrow FWHM Band Pass Filters for Mid Infrared Transmitting Materials

المجلة: Tamjeed Journal of Healthcare Engineering and Science Technology

سنة النشر: 2024

تاريخ النشر: 2024-12-08

Narrow band pass filters are designed to isolate a narrow region of the Mid infrared region. A new design accomplished using theoretical computation adopting MATLAB-software, already depends on characteristic matrix theory. With prescribed Stack of designs, the analyze band-pass filters wavelength range from 3000 to 5000 nm and the design wavelength 4000nm for normal incident for radiation. In this paper, a design based on 4 groups of materials for multilayers dielectric as high / low index: SiC/Si3N4, HgS \HfO2, CdS\ MgF2, PbTe\ CdTe on a ZnSe substrate were used. Simulation is used to demonstrate and examine critical conditions for narrow pass band with high optical transmittance and lower bandwidth.

Studying structural properties of thin film nanostructure of pentoxide vanadium Prepared by reactive DC magnetron sputtering

المجلة: Materials Science and Engineering

سنة النشر: 2019

تاريخ النشر: 2019-12-12

Abstract. In this work, the structural properties of the monocrystalline vanadium pentoxide have been presented. Vanadium pentoxide (V2O5) films were deposited by using a DC reactive magnetron sputtering system at working pressure of 8.5x10-2mbar. The sputtered vanadium atoms were sputtered and oxidized in presence O2:Ar gas mixture by (5/95,10/90,15/85,20/80,30/70,50/50). Employment of magnetron results in the formation of V2O5 in the final samples according to the XRD analysis, increase the roughness and hence surface area of the produced V2O5nanostructures. The results of X-rays are shown to us, the deposited films were formed by nanoparticles with average grain size in the range of (52.11nm to 98.03) nm and roughness Ave (nm) in the range of (1.04nm to 8.88nm) . The deposited films are identified to be polycrystalline nature with a cubic structure along ((001), (111)) and ((200)) orientation also MonoV2O5, Cub VO were found as deposited. The texture of the films was observed using SEM and AFM, it was observed that the grain size was increased with increased the O2 percentage. These improvements in the structural properties of the produced vanadium pentoxide make these nanostructures good candidates for specific applications,

Preparation and Characterization of Vanadium Pentoxide by Dc-Magnetron Sputtering

المجلة: Applied Mathematics and Physics,

سنة النشر: 2019

تاريخ النشر: 2019-12-04

Abstract In this work, the structural properties of the monocrystalline vanadium pentoxide have been presented. Vanadium pentoxide (V2O5) films were deposited by using a DC reactive magnetron sputtering system at working pressure of 8.5x10-2mbar. The sputtered vanadium atoms were sputtered and oxidized in presence O2:Ar gas mixture by (5/95,10/90, 20/80,30/70,50/50). Employment of magnetron results in the formation of V2O5 in the final samples according to the XRD analysis, increase the roughness and hence surface area of the produced V2O5 nanostructures. The results of X-rays are shown to us, the deposited films were formed by nanoparticles with average grain size in the range of (52.11nm to 98.03) nm and roughness Ave (nm) in the range of (1.04nm to 8.88nm). The deposited films are identified to be polycrystalline nature with a cubic structure along ((001), (111)) and ((200)) orientation also MonoV2O5, Cub VO were found as deposited. The texture of the films was observed using SEM and AFM, it was observed that the grain size was increased with increased the O2 percentage. These improvements in the structural properties of the produced vanadium pentoxide make these nanostructures good candidates for specific applications, such as photo detectors, solar cells, electro chromic smart window and gas sensor.

Studying the effect of addition (O2/Ar) on the electrical properties of plasma glow discharge

المجلة: Proceeding of First International and the Third Scientific Conference , College of Science - University of Tikrit

سنة النشر: 2018

تاريخ النشر: 2018-12-12

Containing oxygen plasma for many important applications in the semiconductor industry when adding a small amount of oxygen, can vary significantly properties of the plasma. In this work, the characteristics of the current-voltage characteristics and the failure potential in different percentages of O2 in the gas composition (Ar / O2) are measured. The result showed that the addition of oxygen leads to a decrease in the discharge current at the same discharge voltage and gas pressure. On the contrary, the low failure potential in percent less than O2 of the minimum failure voltage (600, 650, 730, 750, 760, 780) and (5%, 10%, 15%, 20%, 30%, 50%) of O2 percentage, respectively. Plasma detection using optical spectroscopy showed that two different plasma electron groups are characterized by different temperatures and densities, so increasing the electron temperature by adding O2. While the electron density decreases with increase in the O2 ratio.

Study (I-V) Characteristics and Panchen Curve of the Plasma Glow Discharge with Different Inter Electrodes Spacing

المجلة: Indian Journal of Natural Sciences

سنة النشر: 2019

تاريخ النشر: 2019-03-06

In this paper includes results plasma spectra measurements of argon gas, the different distance between cathode and anode, Also, plasma parameters are obtained by optical emission spectroscopy Moreover includes electrical characteristics and analysis for the experimental measurements of reactive glow discharge system. Electrical properties like the Panchen curve, current-voltage, and current-pressure relations were studies. Also, plasma parameters measured by spectrometer were examined. In this present work, we investigate the properties of reactive magnetron sputtering plasma using Vanadium target with applied (660-820) V, and working pressure (0.6 to 0.35) mbar

Effect of the Oxygen / Argon Mixture on the Parameters of the plasma Glow Discharge Prepared by DC Magnetron Sputtering

المجلة: Indian Journal of Natural Sciences

سنة النشر: 2019

تاريخ النشر: 2019-12-12

In this present work, we investigate the properties of reactive magnetron sputtering plasma using Vanadium target. The properties of reactive magnetron Vanadium pentoxide sputtering plasma at various discharge conditions were studied. Basically, the electron temperature is determined from the slope of Boltzmann’s plot that uses the intensity of several spectral lines versus their corresponding excitation energies. We studied the changing of spectral lines intensity of (O2/Ar ) gas mixture plasma and related plasma parameter of electron temperature (Te), electron density (ne), with applied(660-820) V, and working pressure (0.08-0.3) mbar. A results showed that the intensity of spectral lines and electron temperature increase with increasing of applied voltage while electron density decrease as the applied voltage is increased in the range (660 – 820) Volt .on other hand , results show that the OI and OП spectral lines and electron density increase while it’s electron temperature decrease according to increasing of the gas pressure . Results showed that the intensity of spectral lines and electron temperature increase with increasing of applied voltage while electron density decrease as the applied voltage is increased in the range (660 – 820) Volt.